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Synchrotrons Fels Lasers
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BL 02.2 L - ESCA microscopy

Scanning PhotoElectron Microscopy (SPEM)

The SPEM hosted at the ESCAmicroscopy beamline allows to combine chemically surface sensitive measurements with high spatial resolution. A beam spot down to 120 nm and energy sensitivity within 180 meV using a third generation X-ray source providing more than 109 photons/s in the probe has opened the opportunity for material science to perform micro-characterization on a spatial scale comparable to that of the processes and the phases occurring on morphologically and chemically complex surfaces. The experimental apparatus allows to carry out a manifold of experiments, aiming at quantitative and qualitative chemical characterisation of morphologically complex materials including chemical reactions and mass transport processes leading to lateral changes in the composition, morphology and electronic properties of materials. (Research) (Beamline description)

Publications Website
Beamline Resolving Power
4 * 103 [E/deltaE] @ 500 [eV]
Beamline Energy Range
400 - 1200 [eV]
Max Flux On Sample
1 * 1010 [ph/s] @ 500 [eV]
Spot Size On Sample Hor
0.1 - 100 [um]
Spot Size On Sample Vert
0.1 - 100 [um]
Angle Of Incidence Light On Sample Value
80 - 100 [degrees]
Photon Sources

Undulator 2.0

Type
Undulator
Energy Range
90 - 1800 [eV]
Number Of Periods
98
Monochromators

Monochromator 1

Energy Range
400 - 1200 [eV]
Type
SGM
Resolving Power
4000 [E/deltaE] @ 500 [eV]
Number Of Gratings
2
Grating Type
600 grooves/mm, which operates in outside diffraction order configuration with a deflection angle of 1740 and perform sagital focusing to the exit slit
1200 grooves/mm, which operates in outside diffraction order configuration with a deflection angle of 1740 and perform sagital focusing to the exit slit
Pre-focusing Mirror Type
toroidal mirror performing a sagittal focusing of the beam into the entrance slit and tangential focusing into the exit slit
Endstations or Setup

Endstation 1

Microscopes
Scanning Photoemission Microscope (SPEM):
- Imaging mode: photoemission
- lateral resolution: <40nm (imaging) 130nm (spectromicroscopy)
Spectrometer
Hemispherical electron analyzer SPECS Phoibos 100 equipped with 48 anodes MCP:
- energy resolution: 10 mV
- field of view: +/- 10°
- typical collection time: 300ms for energy
Base Pressure
2 * 10-10 [mbar]
Endstation Operative
Yes

Sample

Sample Type
Other: conductive sample (<100 M ohm)
Required Sample Size
X = 10 [mm], Y = 10 [mm], Z = 10 [mm]

Manipulator or Sample stage

Positioning Precision
X = 5 [nm], Y = 5 [nm], Z = 1000 [nm]

Sample Environment

Description
test
Pressure (min)
2 * 10-10 [mbar]
Pressure (Max)
1 [mbar]
Temperature
140 - 1500 [K]

Sample Holders

Type
home made sample holder (heating, cooling, biasing)

Endstation 2

Base Pressure
2 * 10-10 [mbar]
Endstation Operative
Yes

Manipulator or Sample stage

Positioning Precision
X = 1 [mm], Y = 1 [mm], Z = 1 [mm]
contacts
Matteo AMATI
Luca GREGORATTI
Techniques
Imaging
  • Scanning photoemission EM
  • X-ray microscopy
Photoelectron emission
  • XPS
Disciplines
Material Sciences
  • Knowledge based multifunctional materials
control/Data analysis
Control Software Type
  • IDL
Data Output Type
  • photoelectron spectra, photoelectron image
Data Output Format
  • ascii, HDF
Softwares For Data Analysis
  • Igor

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